gallium aluminium nitride造句
造句与例句
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- InAlN is an especially difficult material to grow epitaxially due to the widely different properties of aluminium nitride and indium nitride, and the resulting narrow window for optimised growth can lead to contamination ( i . e . to produce indium gallium aluminium nitride ) and poor crystal quality, at least when compared to AlGaN . Similarly, device fabrication techniques optimised for AlGaN devices may require adjustment to account for the different material properties of InAlN
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